The characteristic finite element alternating-direction method with moving meshes for the transient behavior of a semiconductor device
Y. Yuan 11 Institute of Mathematics, Shandong University, Jinan, Shandong 250100, P.R.China
Received by the editors March 9, 2010 and, in revised form, August 28, 2010.
For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized L^2 projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L^2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.AMS subject classifications: 65M06, 65N30, 76M10, 76S05
Key words: Semiconductor device, alternating-direction, moving meshes, characteristic finite element, L^2 error estimate.