Int. J. Numer. Anal. Mod., 9 (2012), pp. 86-104.


The characteristic finite element alternating-direction method with moving meshes for the transient behavior of a semiconductor device

Y. Yuan 1

1 Institute of Mathematics, Shandong University, Jinan, Shandong 250100, P.R.China

Received by the editors March 9, 2010 and, in revised form, August 28, 2010.
Abstract

For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized L^2 projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L^2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.

AMS subject classifications: 65M06, 65N30, 76M10, 76S05
Key words: Semiconductor device, alternating-direction, moving meshes, characteristic finite element, L^2 error estimate.
 

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