Volume 11, Issue 5
Monte Carlo Simulations of Elastic Scattering with Applications to DC and High Power Pulsed Magnetron Sputtering for Ti3SiC2

Jürgen Geiser & Sven Blankenburg

Commun. Comput. Phys., 11 (2012), pp. 1618-1642.

Published online: 2012-11

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  • Abstract

We simulate the particle transport in a thin film deposition process made by PVD (physical vapor deposition) and present several models for projectile and target collisions in order to compute the mean free path and the differential cross section (angular distribution of scattered projectiles) of the scattering process. A detailed description of collision models is of the highest importance in Monte Carlo simulations of high power impulse magnetron sputtering and DC sputtering. We derive an equation for the mean free path for arbitrary interactions (cross sections) that includes the relative velocity between the particles. We apply our results to two major interaction models: hard sphere interaction & screened Coulomb interaction. Both types of interaction separate DC sputtering from HIPIMS. 

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@Article{CiCP-11-1618, author = {}, title = {Monte Carlo Simulations of Elastic Scattering with Applications to DC and High Power Pulsed Magnetron Sputtering for Ti3SiC2}, journal = {Communications in Computational Physics}, year = {2012}, volume = {11}, number = {5}, pages = {1618--1642}, abstract = {

We simulate the particle transport in a thin film deposition process made by PVD (physical vapor deposition) and present several models for projectile and target collisions in order to compute the mean free path and the differential cross section (angular distribution of scattered projectiles) of the scattering process. A detailed description of collision models is of the highest importance in Monte Carlo simulations of high power impulse magnetron sputtering and DC sputtering. We derive an equation for the mean free path for arbitrary interactions (cross sections) that includes the relative velocity between the particles. We apply our results to two major interaction models: hard sphere interaction & screened Coulomb interaction. Both types of interaction separate DC sputtering from HIPIMS. 

}, issn = {1991-7120}, doi = {https://doi.org/10.4208/cicp.210211.270511a}, url = {http://global-sci.org/intro/article_detail/cicp/7427.html} }
TY - JOUR T1 - Monte Carlo Simulations of Elastic Scattering with Applications to DC and High Power Pulsed Magnetron Sputtering for Ti3SiC2 JO - Communications in Computational Physics VL - 5 SP - 1618 EP - 1642 PY - 2012 DA - 2012/11 SN - 11 DO - http://dor.org/10.4208/cicp.210211.270511a UR - https://global-sci.org/intro/article_detail/cicp/7427.html KW - AB -

We simulate the particle transport in a thin film deposition process made by PVD (physical vapor deposition) and present several models for projectile and target collisions in order to compute the mean free path and the differential cross section (angular distribution of scattered projectiles) of the scattering process. A detailed description of collision models is of the highest importance in Monte Carlo simulations of high power impulse magnetron sputtering and DC sputtering. We derive an equation for the mean free path for arbitrary interactions (cross sections) that includes the relative velocity between the particles. We apply our results to two major interaction models: hard sphere interaction & screened Coulomb interaction. Both types of interaction separate DC sputtering from HIPIMS. 

Jürgen Geiser & Sven Blankenburg. (2020). Monte Carlo Simulations of Elastic Scattering with Applications to DC and High Power Pulsed Magnetron Sputtering for Ti3SiC2. Communications in Computational Physics. 11 (5). 1618-1642. doi:10.4208/cicp.210211.270511a
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