Volume 4, Issue 5
Stationary and Transient Simulations for a One-dimensional Resonant Tunneling Diode

Xin Hu, Shaoqiang Tang & Maxime Leroux

DOI:

Commun. Comput. Phys., 4 (2008), pp. 1034-1050.

Published online: 2008-11

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  • Abstract

Weinvestigatethevalidityofstationarysimulations forsemiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models. Careful numerical investigations to a quantum hydrodynamic model reveal thatthe transientsimulations donot alwaysconvergetothesteadystates. Inparticular, growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model. 

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@Article{CiCP-4-1034, author = {Xin Hu, Shaoqiang Tang and Maxime Leroux}, title = {Stationary and Transient Simulations for a One-dimensional Resonant Tunneling Diode}, journal = {Communications in Computational Physics}, year = {2008}, volume = {4}, number = {5}, pages = {1034--1050}, abstract = {

Weinvestigatethevalidityofstationarysimulations forsemiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models. Careful numerical investigations to a quantum hydrodynamic model reveal thatthe transientsimulations donot alwaysconvergetothesteadystates. Inparticular, growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model. 

}, issn = {1991-7120}, doi = {https://doi.org/}, url = {http://global-sci.org/intro/article_detail/cicp/7826.html} }
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