Volume 24, Issue 3
Model Analysis and Parameter Extraction for Mos Capacitor Including Quantum Mechanical Effects
DOI:

J. Comp. Math., 24 (2006), pp. 401-411.

Published online: 2006-06

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• Abstract

The high frequency CV curves of MOS capacitor have been studied. It is shown that semiclassical model is a good approximation to quantum model and approaches to classical model when the oxide layer is thick. This conclusion provides us an efficient (semiclassical) model including quantum mechanical effects to do parameter extraction for ultrathin oxide device. Here the effective extracting strategy is designed and numerical experiments demonstrate the validity of the strategy.

• Keywords

Poisson Equation Schr$\"{o}$dinger Equation MOS Capacitor Quantum Effect Sensitivity Parameter Extraction

• AMS Subject Headings

TY - JOUR T1 - Model Analysis and Parameter Extraction for Mos Capacitor Including Quantum Mechanical Effects JO - Journal of Computational Mathematics VL - 3 SP - 401 EP - 411 PY - 2006 DA - 2006/06 SN - 24 DO - http://doi.org/ UR - https://global-sci.org/intro/article_detail/jcm/8761.html KW - Poisson Equation KW - Schr$\"{o}$dinger Equation KW - MOS Capacitor KW - Quantum Effect KW - Sensitivity KW - Parameter Extraction AB - The high frequency CV curves of MOS capacitor have been studied. It is shown that semiclassical model is a good approximation to quantum model and approaches to classical model when the oxide layer is thick. This conclusion provides us an efficient (semiclassical) model including quantum mechanical effects to do parameter extraction for ultrathin oxide device. Here the effective extracting strategy is designed and numerical experiments demonstrate the validity of the strategy.