Volume 1, Issue 3
Grown-in Defects of InSb Crystals: Models and Computation

N. Vaidya, H. Huang & D. Liang

DOI:

Commun. Comput. Phys., 1 (2006), pp. 511-527.

Published online: 2006-01

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  • Abstract

In this paper, we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski (CZ) technique. Our model is similar to the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals. The temperature solution and the advance of the melt-crystal interface, which determines the time-dependent domain of the model, are based on a recently derived perturbation model. We propose a finite difference method which takes into account the moving interface. We study the effect of thermal flux on the point defect patterns during and at the end of the growth process. Our results show that the concentration of excessive point defects is positively correlated to the heat flux in the system.

  • Keywords

Crystal growth Czochralski technique point defects recombination thermal flux finite difference method.

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@Article{CiCP-1-511, author = {}, title = {Grown-in Defects of InSb Crystals: Models and Computation}, journal = {Communications in Computational Physics}, year = {2006}, volume = {1}, number = {3}, pages = {511--527}, abstract = {

In this paper, we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski (CZ) technique. Our model is similar to the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals. The temperature solution and the advance of the melt-crystal interface, which determines the time-dependent domain of the model, are based on a recently derived perturbation model. We propose a finite difference method which takes into account the moving interface. We study the effect of thermal flux on the point defect patterns during and at the end of the growth process. Our results show that the concentration of excessive point defects is positively correlated to the heat flux in the system.

}, issn = {1991-7120}, doi = {https://doi.org/}, url = {http://global-sci.org/intro/article_detail/cicp/7968.html} }
TY - JOUR T1 - Grown-in Defects of InSb Crystals: Models and Computation JO - Communications in Computational Physics VL - 3 SP - 511 EP - 527 PY - 2006 DA - 2006/01 SN - 1 DO - http://dor.org/ UR - https://global-sci.org/intro/article_detail/cicp/7968.html KW - Crystal growth KW - Czochralski technique KW - point defects KW - recombination KW - thermal flux KW - finite difference method. AB -

In this paper, we present a model for grown-in point defects inside indium antimonide crystals grown by the Czochralski (CZ) technique. Our model is similar to the ones used for silicon crystal, which includes the Fickian diffusion and a recombination mechanism. This type of models is used for the first time to analyze grown-in point defects in indium antimonide crystals. The temperature solution and the advance of the melt-crystal interface, which determines the time-dependent domain of the model, are based on a recently derived perturbation model. We propose a finite difference method which takes into account the moving interface. We study the effect of thermal flux on the point defect patterns during and at the end of the growth process. Our results show that the concentration of excessive point defects is positively correlated to the heat flux in the system.

N. Vaidya, H. Huang & D. Liang. (2020). Grown-in Defects of InSb Crystals: Models and Computation. Communications in Computational Physics. 1 (3). 511-527. doi:
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