From a simplified approximate semiconductor model, we develop a 1-D identification problem to recover the mobilities for electrons and holes in semiconductors based on the LBIC technique, and cast it as an optimization problem. Its solution is defined by the minimal point of some objective functional. On this argumentation, we derive the gradient operator of objective functional and the necessary condition for the solution of inverse problem. Our result provides a numerical approach to reconstruct the mobilities for electrons and holes in semiconductors.

The initial-boundary value problem of the propagation of nonlinear longitudinal elastic waves in an initially strained rod is considered. The rod is assumed to interact with the surrouding elastic and viscous external medium. The long time behavior of solutions is derived ancl global attractors in E_1 space is obtained.

Interface problems for elliptic systems of second order partial differential equations are studied. The main result is that the solution in the neighborhood of the singular point can be divided into two parts one of which is a solution to the homogeneous system with constant coefficients, and the other one possesses higher regularity.

In this paper, the global attractor, exponential attractor and flat inertial manifold are obtained for a nonlinear beam equation with strong structural damping.

In this work we are concerned with the existence of integral solution for a nonlinear abstract viscoelastic problem in Banach space, where the operator is accretive dependent on time.

In this paper it is shown that the Appell's system of partial differential equations, with two complex variables x and y, reduces to the system of total differential equations. Also, it is obtained the differential equation on the section y=const.

The initial boundary value problems (IBVP) for the P-system with damping on [0, 1] × (0, +∞) arc considered. The global existence of smooth solutions for the TBVP are proved, and their large-time behavior is analyzed. The time-asymptotic equivalence of these solutions to the solutions of the IBVP for the reduced system (1.2) is shown.

In this paper we are concerned with the global existence of weak solutions of the Cauchy problem for a simplified one-dimensional hydrodynamic model for semiconductors. Convergence of approximate solutions derived by the fractional step Lax-Friedrichs scheme is established by using the compensated compactness method.